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Scanning-gate-induced effects and spatial mapping of a cavity

Lookup NU author(s): Dr Aleksey KozikovORCiD



This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).


Tailored electrostatic potentials are at the heart of semiconductor nanostructures. We present measurements of size and screening effects of the tip-induced potential in scanning gate microscopy on a two-dimensional electron gas. First, we show methods on how to estimate the size of the tip-induced potential. Second, a ballistic cavity is studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Third, the effect of electrostatic screening of the metallic top gates is discussed.

Publication metadata

Author(s): Steinacher R, Kozikov AA, Rössler C, Reichl C, Wegscheider W, Ihn T, Ensslin K

Publication type: Article

Publication status: Published

Journal: New Journal of Physics

Year: 2015

Volume: 17

Online publication date: 22/04/2015

Acceptance date: 20/03/2015

Date deposited: 19/06/2020

ISSN (electronic): 1367-2630

Publisher: Institute of Physics Publishing Ltd.


DOI: 10.1088/1367-2630/17/4/043043


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