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Scanning-gate-induced effects and spatial mapping of a cavity

Lookup NU author(s): Dr Aleksey KozikovORCiD

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).


Abstract

Tailored electrostatic potentials are at the heart of semiconductor nanostructures. We present measurements of size and screening effects of the tip-induced potential in scanning gate microscopy on a two-dimensional electron gas. First, we show methods on how to estimate the size of the tip-induced potential. Second, a ballistic cavity is studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Third, the effect of electrostatic screening of the metallic top gates is discussed.


Publication metadata

Author(s): Steinacher R, Kozikov AA, Rössler C, Reichl C, Wegscheider W, Ihn T, Ensslin K

Publication type: Article

Publication status: Published

Journal: New Journal of Physics

Year: 2015

Volume: 17

Online publication date: 22/04/2015

Acceptance date: 20/03/2015

Date deposited: 19/06/2020

ISSN (electronic): 1367-2630

Publisher: Institute of Physics Publishing Ltd.

URL: https://doi.org/10.1088/1367-2630/17/4/043043

DOI: 10.1088/1367-2630/17/4/043043


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