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Non-contact degradation evaluation for IGBT modules using eddy current pulsed thermography approach

Lookup NU author(s): Professor Gui Yun Tian

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).


Abstract

© 2020 by the authors.In this paper, a non-contact degradation evaluation method for insulated gate bipolar transistor (IGBT) modules is proposed based on eddy current pulsed thermography approach. In non-contact heat excitation procedures, a high-power induction heater is introduced to generate heat excitation in IGBT modules. The thermographs of the whole temperature mapping are recorded non-invasively by an IR camera. As a result, the joint degradation of IGBT modules can be evaluated by the transient thermal response curves derived from the recorded thermographs. Firstly, the non-destructive evaluation principle of the eddy current pulsed thermography (ECPT) system for an IGBT module with a heat sink is introduced. A 3D simulation module is built with physical parameters in ANSYS simulations, and then thermal propagation behavior considering the degradation impact is investigated. An experimental ECPT system is set up to verify the effectiveness of the proposed method. The experimental results show that the delay time to peak temperature can be extracted and treated as an effective indicative feature of joint degradation.


Publication metadata

Author(s): Liu X, Tian G, Chen Y, Luo H, Zhang J, Li W

Publication type: Article

Publication status: Published

Journal: Energies

Year: 2020

Volume: 13

Issue: 10

Online publication date: 21/05/2020

Acceptance date: 19/05/2020

Date deposited: 17/06/2020

ISSN (print): 1996-1073

ISSN (electronic): 1996-1073

Publisher: MDPI AG

URL: https://doi.org/10.3390/en13102613

DOI: 10.3390/en13102613


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