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Lookup NU author(s): Professor Gui Yun TianORCiD
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
© 2020 by the authors.In this paper, a non-contact degradation evaluation method for insulated gate bipolar transistor (IGBT) modules is proposed based on eddy current pulsed thermography approach. In non-contact heat excitation procedures, a high-power induction heater is introduced to generate heat excitation in IGBT modules. The thermographs of the whole temperature mapping are recorded non-invasively by an IR camera. As a result, the joint degradation of IGBT modules can be evaluated by the transient thermal response curves derived from the recorded thermographs. Firstly, the non-destructive evaluation principle of the eddy current pulsed thermography (ECPT) system for an IGBT module with a heat sink is introduced. A 3D simulation module is built with physical parameters in ANSYS simulations, and then thermal propagation behavior considering the degradation impact is investigated. An experimental ECPT system is set up to verify the effectiveness of the proposed method. The experimental results show that the delay time to peak temperature can be extracted and treated as an effective indicative feature of joint degradation.
Author(s): Liu X, Tian G, Chen Y, Luo H, Zhang J, Li W
Publication type: Article
Publication status: Published
Online publication date: 21/05/2020
Acceptance date: 19/05/2020
Date deposited: 17/06/2020
ISSN (print): 1996-1073
ISSN (electronic): 1996-1073
Publisher: MDPI AG
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