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Lookup NU author(s): Professor Werner Hofer
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© 2020 Chinese Physical Society and IOP Publishing Ltd.Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications.
Author(s): Fan P, Zhang R-Z, Qi J, Li E, Qian G-J, Chen H, Wang D-F, Zheng Q, Wang Q, Lin X, Zhang Y-Y, Du S, Hofer WA, Gao H-J
Publication type: Article
Publication status: Published
Journal: Chinese Physics B
Year: 2020
Volume: 29
Issue: 9
Print publication date: 01/08/2020
Acceptance date: 02/04/2018
ISSN (print): 1674-1056
ISSN (electronic): 2058-3834
Publisher: IOP Publishing Ltd
URL: https://doi.org/10.1088/1674-1056/abab80
DOI: 10.1088/1674-1056/abab80
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