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Epitaxial synthesis and electronic properties of monolayer Pd2Se3

Lookup NU author(s): Professor Werner Hofer


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© 2020 Chinese Physical Society and IOP Publishing Ltd.Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications.

Publication metadata

Author(s): Fan P, Zhang R-Z, Qi J, Li E, Qian G-J, Chen H, Wang D-F, Zheng Q, Wang Q, Lin X, Zhang Y-Y, Du S, Hofer WA, Gao H-J

Publication type: Article

Publication status: Published

Journal: Chinese Physics B

Year: 2020

Volume: 29

Issue: 9

Print publication date: 01/08/2020

Acceptance date: 02/04/2018

ISSN (print): 1674-1056

ISSN (electronic): 2058-3834

Publisher: IOP Publishing Ltd


DOI: 10.1088/1674-1056/abab80


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