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Lookup NU author(s): Professor Werner Hofer
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© Graphene on SiO2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.
Author(s): Guo H, Wang X, Huang L, Jin X, Yang Z, Zhou Z, Hu H, Zhang Y-Y, Lu H, Zhang Q, Shen C, Lin X, Gu L, Dai Q, Bao L, Du S, Hofer W, Pantelides ST, Gao H-J
Publication type: Article
Publication status: Published
Journal: Nano Letters
Year: 2020
Volume: 20
Issue: 12
Pages: 8584-8591
Print publication date: 09/12/2020
Online publication date: 17/11/2020
Acceptance date: 11/11/2020
ISSN (print): 1530-6984
ISSN (electronic): 1530-6992
Publisher: American Chemical Society
URL: https://doi.org/10.1021/acs.nanolett.0c03254
DOI: 10.1021/acs.nanolett.0c03254
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