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Coherent electron quantum transport in In_0.53Ga_0.47As/GaAs_0.51Sb_0.49 double barrier resonant tunnelling structures

Lookup NU author(s): Milos Indjin

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).

Abstract

In this work, we have modelled and computed the transport properties of the double-barrier InGaAs/GaAsSb structure from the resonant tunnelling point of view. Based on the classical Tsu-Esaki formula for the tunnelling current, we have calculated the current density-voltage characteristic of a Al-free type-II In0.53Ga0.47As/GaAs0.51Sb0.49 structure at different cryogenic and elevated temperatures. The tunnelling coefficient has been calculated in the framework of effective mass approximation with nonparabolicity included, using the transfer matrix approach. A good qualitative agreement of the position of resonant current peaks with the existing experimental data was achieved. Our calculation shows a very high sensitivity of the tunnelling current peak on monolayer-scale layer structure fluctuation which strongly affects peak to valley ratio in the resonant tunnelling structure.

Publication metadata

Author(s): Indjin M, Griffiths J

Publication type: Article

Publication status: Published

Journal: Optical and Quantum Electronics

Year: 2020

Volume: 52

Online publication date: 11/05/2020

Acceptance date: 13/04/2020

Date deposited: 07/12/2020

ISSN (print): 0306-8919

ISSN (electronic): 1573-817X

Publisher: Springer

URL: https://doi.org/10.1007/s11082-020-02359-9

DOI: 10.1007/s11082-020-02359-9

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