Browse by author
Lookup NU author(s): Professor Volker Pickert, Dr Bing Ji
This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2021.
For re-use rights please refer to the publisher's terms and conditions.
Temperature Sensitive Electrical Parameters (TSEPs) are used to determine the chip temperature of a singlechip IGBT power module by measuring one electrical device parameter. Commonly, most TSEPs have a linear relationship between the chip temperature and the electrical parameter. Like any sensor, preferred attributes of TSEPs include good accuracy, linearity, and sensitivity. For multichip Insulated Gate Bipolar Transistors (mIGBTs) modules, these can only be achieved when all chips have the same temperature. Equal chip temperatures among different semiconductor chips can be achieved when placing mIGBTs in environmental chambers to produce a homogeneous temperature distribution (HTD). In real applications, however, mIGBTs are power cycled and are exposed to inhomogeneous temperature distribution (ITD) where temperature differences exist between chips. Consequently, measuring one electric parameter only cannot represent each chip temperature which impacts the TSEP sensitivity, linearity, and accuracy. This paper compares the performance of ten TSEPs applied to a mIGBT module operating at HTD and ITD conditions in order to determine which TSEPs are most suitable for mIGBTs in real applications.
Author(s): Chen C, Pickert V, Ji B, Jia C, Knoll A, Ng C
Publication type: Article
Publication status: Published
Journal: Journal of Emerging and Selected Topics in Power Electronics
Year: 2021
Volume: 9
Issue: 5
Pages: 6282-6292
Print publication date: 01/10/2021
Online publication date: 28/12/2020
Acceptance date: 15/12/2020
Date deposited: 17/12/2020
ISSN (print): 2168-6777
ISSN (electronic): 2168-6785
Publisher: IEEE
URL: https://doi.org/10.1109/JESTPE.2020.3047738
DOI: 10.1109/JESTPE.2020.3047738
Altmetrics provided by Altmetric
