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Thermal and Mechanical Analysis of Clamping Area on the Performance of Press Pack IGBT in Series-connection Stack Application

Lookup NU author(s): Dr Haimeng Wu, Dr Xueguan Song, Professor Volker Pickert

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This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2021.

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Abstract

Press Pack Insulated Gate Bipolar Transistors (PP- IGBTs) are commonly connected in series and stacked together with heatsinks using an exterior clamping fixture in order to achieve high voltage dc-link levels. A suitable contact area between the clamping fixture and the device is essential to ensuring optimal PP IGBT thermo-mechanical performance, especially for the first and last devices in a stack. In this study, the effects of the clamping area on collector deformation, temperature, and stress distribution are investigated by means of the finite element method (FEM). Moreover, the paper analyzes the influence of heatsink thickness to maximize the stress evenness of the terminal PP IGBT and reduce the overall length of the stack system. The results indicate that the collector lid is prone to warpage due to thermal expansion, which results in a decrease in the effective contact area between component layers. As the contact resistance increases, the chips accumulate considerable heat. Increasing the clamping area at this point can adequately compensate for the warp deformation and can also improve the stress uniformity of the chips. Finally, an experiment making use of stress-sensitive film has been carried out to verify the developed FEM models.


Publication metadata

Author(s): Dai S, Wang Z, Wu H, Song X, Li G, Pickert V

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Components, Packaging and Manufacturing Technology

Year: 2021

Pages: epub ahead of print

Online publication date: 18/01/2021

Acceptance date: 06/01/2021

Date deposited: 08/01/2021

ISSN (print): 2156-3950

ISSN (electronic): 2156-3985

Publisher: IEEE

URL: https://ieeexplore.ieee.org/document/9328128

DOI: https://doi.org/10.1109/TCPMT.2021.3052175


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