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Lookup NU author(s): Dr Stevin PramanaORCiD
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND).
Single-phase Hf2Al4C5 ternary carbide was fabricated from Hf/Al/C powder mixtures by pressure assisted sintering techniques such as hot pressing and spark plasma sintering at 1900°C for 3h and 10min, respectively. XRD confirmed that the ternary carbide started to form at temperatures as low as 1500°C and with total formation of Hf2Al4C5 after reactive sintering for 1h at 1900°C. It is evident from HRTEM that two Hf-C layers were sandwiched with 4 Al-C layers (Al4C3) in the Hf2Al4C5 ternary carbide. Tight interlocking of grains, faceted grains and stacking faults were occasionally observed. Thermal conductivity of Hf2Al4C5 is measured to be 14 w.m-1 k - 1 from room temperature to 1300°C. The oxidation studies carried out at 1300°C for 3h reveal that the oxidation layer thickness is around 220 μm and it contains microcracks closer to sample surface whereas the interface looks seamless without any cracking or spallation of the oxide layer.
Author(s): Jayaseelan DD, Pramana S, Grasso S, Bai Y, Skinner S, Reece MJ, Lee WE
Publication type: Article
Publication status: Published
Journal: Journal of the European Ceramic Society
Pages: Epub ahead of print
Online publication date: 16/12/2021
Acceptance date: 12/12/2021
Date deposited: 16/12/2021
ISSN (print): 0955-2219
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