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Calculation of dopant segregation ratios at semiconductor interfaces

Lookup NU author(s): Dr Chihak Ahn

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Abstract

We analyzed dopant segregation at semiconductor interfaces by equilibrating chemical potentials of dopants and electrons on each side of the interface. We apply the theory to Si/strained-SiGe interfaces and compare the predictions with existing experimental data. The calculations include changes in effective density of states (with particular attention to high-temperature hole effective mass), band-gap narrowing due to composition and temperature, and lattice parameter changes. We find that strong B segregation is dominated by stress effects, while moderate P or As segregation is dominated by changes in electronic band structure. We also observe that calculated stress energy is nearly temperature independent.

Publication metadata

Author(s): Ahn C, Dunham ST

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2008

Volume: 78

Issue: 19

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.78.195303

DOI: 10.1103/PhysRevB.78.195303

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