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Lookup NU author(s): Dr Chihak Ahn
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We analyzed dopant segregation at semiconductor interfaces by equilibrating chemical potentials of dopants and electrons on each side of the interface. We apply the theory to Si/strained-SiGe interfaces and compare the predictions with existing experimental data. The calculations include changes in effective density of states (with particular attention to high-temperature hole effective mass), band-gap narrowing due to composition and temperature, and lattice parameter changes. We find that strong B segregation is dominated by stress effects, while moderate P or As segregation is dominated by changes in electronic band structure. We also observe that calculated stress energy is nearly temperature independent.
Author(s): Ahn C, Dunham ST
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
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