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Electroluminescent vertical tunneling junctions based on WSe₂ monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields

Lookup NU author(s): Dr Aleksey KozikovORCiD

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND).

Abstract

We experimentally demonstrate the creation of defects in monolayer WSe2 via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe2 monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron–hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.

Publication metadata

Author(s): Howarth H, Vaklinova K, Grzeszczyk M, Baldi G, Hague L, Potemski M, Novoselov KS, Kozikov A, Koperski M

Publication type: Article

Publication status: Published

Journal: PNAS

Year: 2024

Volume: 121

Issue: 23

Print publication date: 04/06/2024

Online publication date: 31/05/2024

Acceptance date: 29/04/2024

Date deposited: 27/06/2024

ISSN (print): 0027-8424

ISSN (electronic): 1091-6490

Publisher: National Academy of Sciences

URL: https://doi.org/10.1073/pnas.2401757121

DOI: 10.1073/pnas.2401757121

Data Access Statement: The data that support the findings of this study (52) are openly available at the following DOI: https://doi.org/10.58132/BPYO1C. All other data are included in the manuscript and/or SI Appendix.

PubMed id: 38820004

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