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Impact of graphene encapsulation on thermodynamics of quantum emitters in hexagonal boron nitride

Lookup NU author(s): Professor Jon Goss, Dr Jonathan Mar

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).

Abstract

© 2025 American Physical SocietyColor centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms for charge control of these defect color centers in hBN/graphene heterostructures. In this article, we show that screening due to the encapsulation of hBN by graphene modifies the electrical levels of hBN, leading to charge transfer. Furthermore, we show that the charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. This study shows that accurate modeling of the charge state of the defect is necessary to be able to electrically control defects.

Publication metadata

Author(s): Prasad MK, Goss JP, Mar JD

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2025

Volume: 112

Issue: 11

Online publication date: 02/09/2025

Acceptance date: 30/07/2025

Date deposited: 03/11/2025

ISSN (print): 2469-9950

ISSN (electronic): 2469-9969

Publisher: American Physical Society

URL: https://doi.org/10.1103/k155-1t97

DOI: 10.1103/k155-1t97

Data Access Statement: The data that support the findings of this article are openly available https://doi.org/10.25405/data.ncl.29161769.v1.

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