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Lookup NU author(s): Professor Jon Goss
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
© 2025 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "https://creativecommons.org/licenses/by/4.0/"Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.We investigated ultrafast defect-lattice dynamics in diamond using the Ns:H-C0 defect, an analog of bond-centered hydrogen in semiconductors. Combining synthesis, ultrafast vibrational spectroscopy, and ab initio calculations, we show that excitation of the defect's stretch mode leads to the generation of localized phonons and the formation of a hot ground state, where the interatomic potential is transiently modified. Our results reveal unexpected nonequilibrium phonon effects despite diamond's exceptionally high thermal conductivity, with implications for quantum defect engineering.
Author(s): Keat TJ, Zhao J, Woolley JM, Malakar P, Greetham GM, Wu X, Goss JP, Cruddace RJ, Hartland CB, Dale MW, Stavros VG, Newton ME, Lloyd-Hughes J
Publication type: Article
Publication status: Published
Journal: Physical Review Letters
Year: 2025
Volume: 135
Issue: 21
Online publication date: 18/11/2025
Acceptance date: 20/10/2025
Date deposited: 01/12/2025
ISSN (print): 0031-9007
ISSN (electronic): 1079-7114
Publisher: American Physical Society
URL: https://doi.org/10.1103/mvdf-bdrx
DOI: 10.1103/mvdf-bdrx
Data Access Statement: The data that support the findings of this Letter are not publicly available upon publication because it is not technically feasible and/or the cost of preparing, depositing, and hosting the data would be prohibitive within the terms of this research project. The data are available from the authors upon reasonable request.
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