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Lookup NU author(s): Dr Xiang Wang, Dr Haimeng Wu, Professor Volker PickertORCiD
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
The MOSFET is one of the most widely used power devices in mid-voltage applications, offering advantages such as fast switching, high power density, and miniaturized power electronics converters. However, rapid switching transients also introduce high-frequency oscillations, which pose a significant challenge and require mitigation with minimal system modifications. This paper presents a novel transfer functionbased methodology for analytically modeling MOSFET switching behavior, enabling precise prediction of drain current and voltage transitions under controlled gate current. The transfer functionbased analysis reveals that the drain current oscillation is dependent on the change of d𝑖𝐷/d𝑡 at its peak magnitude, regardless of other time intervals during the switching transient. A quadratic equation is obtained to comprehensively describe the behavior of increasing drain current, and a linear function for the drainsource voltage. The proposed gate current profile is implemented via a fully integrated digital active gate driver IC that reduces oscillations by 32 % without additional switching losses. Unlike previous works that primarily rely on empirical gate driver design, the fundamental transfer function-based analytical model introduced in this paper directly links the gate current profile to MOSFET oscillation behavior. Based on this model, a threestep gate current profile is systematically constructed, which is straightforward to implement and adapt using a fully digital, programmable AGD IC. This enables oscillation suppression and loss minimization to be achieved with a practical, integrated solution beyond conventional analog-based approaches.
Author(s): Wang X, Feng Z, Wu H, Sandell M, Pickert V
Publication type: Article
Publication status: Published
Journal: IEEE Journal of Emerging and Selected Topics in Power Electronics
Year: 2025
Pages: Epub ahead of print
Online publication date: 05/12/2025
Acceptance date: 02/04/2018
Date deposited: 19/12/2025
ISSN (print): 2168-6777
ISSN (electronic): 2168-6785
Publisher: IEEE
URL: https://doi.org/10.1109/JESTPE.2025.3640832
DOI: 10.1109/JESTPE.2025.3640832
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