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Calculations of effect of anisotropic stress/strain on dopant diffusion in silicon under equilibrium and nonequilibrium conditions

Lookup NU author(s): Dr Chihak Ahn

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Publication metadata

Author(s): Dunham ST, Diebel M, Ahn C, Shih C-L

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science and Technology B

Year: 2006

Volume: 24

Pages: 456

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1116/1.2151908

DOI: 10.1116/1.2151908

Notes: Article no. 456 6 pages

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