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Self-heating effects in virtual substrate SiGe HBTs

Lookup NU author(s): Dr Nebojsa Jankovic Professor, Dr Alton Horsfall


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In this paper we investigated the self-heating effects in SiGe heterojunction bipolar transistors (HBTs) fabricated on SiGe alloy virtual substrate. Using a two-dimensional process and device numerical simulation, we have found that self-heating effects and local temperature increase due to the internal power dissipation are substantially more pronounced in virtual substrate HBTs in comparison with identical HBT devices on silicon substrate. (12 References).

Publication metadata

Author(s): Horsfall AB; Jankovic ND

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services

Year of Conference: 2003

Pages: 573-576

Publisher: IEEE


DOI: 10.1109/TELSKS.2003.1246291

Notes: 2. Piscataway, NJ, USA.

Library holdings: Search Newcastle University Library for this item

ISBN: 0780379632