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The twelve-line 1.682 eV luminescence center in diamond and the vacancy-silicon complex

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon

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Abstract

Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.

Publication metadata

Author(s): Goss JP, Jones R, Breuer SJ, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 1996

Volume: 77

Issue: 14

Pages: 3041-3044

Print publication date: 01/01/1996

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.77.3041

DOI: 10.1103/PhysRevLett.77.3041

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