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The divacancy in silicon and diamond

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon

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Abstract

First-principles studies of the divacancy (V2) in both silicon and diamond are reported. We demonstrate that the contrasting experimental spin-density localisation of both systems can be explained through the one-electron pictures arising from opposing distortions.

Publication metadata

Author(s): Coomer BJ, Resende A, Goss JP, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 1999

Volume: 273-274

Pages: 520-523

Print publication date: 15/12/1999

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-4526(99)00543-8

DOI: 10.1016/S0921-4526(99)00543-8

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