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The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Local density-functional methods are used to examine the behaviour of O and O-related defect complexes at {1010}-type surfaces in GaN. We find that O has a tendency to segregate to the (1010) surface and we identify the gallium vacancy surrounded by three oxygen impurities (VGa-(ON)3) to be a particularly stable and electrically inert complex. We suggest that these complexes impede growth at the walls of the nanopipes preventing them from growing in. Also, other donor-related defect complexes, in particular gallium vacancies surrounded by three silicon atoms as second nearest neighbours, are expected to have the same effect.

Publication metadata

Author(s): Gutierrez R, Haugk M, Frauenheim Th, Elsner J, Jones R, Heggie MI, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Philosophical Magazine Letters

Year: 1999

Volume: 79

Issue: 3

Pages: 147-152

Print publication date: 01/03/1999

ISSN (print): 0950-0839

ISSN (electronic): 1362-3036

Publisher: Taylor & Francis Ltd.

URL: http://dx.doi.org/10.1080/095008399177525

DOI: 10.1080/095008399177525

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