ePrints

Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

First-principles local-density formalism cluster theory is used to determine the structure of Au- and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied to extract their donor and acceptor levels and these are compared with capacitance transient spectroscopic measurements. Assignments of these levels to specific H defects are then made. Models for the defects responsible for the neutralization of the electrical activity of the Au and Ag centers are proposed.

Publication metadata

Author(s): Resende A, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 1999

Volume: 82

Issue: 10

Pages: 2111-2114

Print publication date: 08/03/1999

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.82.2111

DOI: 10.1103/PhysRevLett.82.2111

Altmetrics

Share