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Interstitial aggregates and a new model for the I1/W optical centre in silicon

Lookup NU author(s): Professor Jon Goss, Angharad Jones, Professor Patrick Briddon

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Abstract

The properties of di-interstitial (I2), tri-interstitial (I3) and tetra-interstitial (I4) structures in silicon were studied by employing first principles local-density-functional (LDF) theory. A tri-interstitial defect can account for many of the fundamental properties of the I1/W-optical center which is observed in irradiated, annealed silicon. Energy comparisons between di-interstitial defects reveal four low-energy structures within 0.5 eV of each other.

Publication metadata

Author(s): Coomer BJ, Goss JP, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 1999

Volume: 273-274

Pages: 505-508

Print publication date: 15/12/1999

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0921-4526(99)00538-4

DOI: 10.1016/S0921-4526(99)00538-4

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