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Optical bands related to dislocations in Si

Lookup NU author(s): Richard Jones, Professor Patrick Briddon

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Abstract

First-principles calculations are used to investigate the interaction of self-interstitial aggregates with the 90° partial dislocation in Si. We find that I4 is bound to the line with an energy of around 3 eV. The defect causes deep levels to appear in the band gap and optical transitions between these levels may account for the luminescent bands relating to plastically deformed Si.

Publication metadata

Author(s): Blumenau AT, Jones R, Oberg S, Frauenheim T, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2000

Volume: 12

Issue: 49

Pages: 10123-10129

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/12/49/311

DOI: 10.1088/0953-8984/12/49/311

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