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Lookup NU author(s): Richard Jones,
Professor Patrick Briddon
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First-principles calculations are used to investigate the interaction of self-interstitial aggregates with the 90° partial dislocation in Si. We find that I4 is bound to the line with an energy of around 3 eV. The defect causes deep levels to appear in the band gap and optical transitions between these levels may account for the luminescent bands relating to plastically deformed Si.
Author(s): Blumenau AT, Jones R, Oberg S, Frauenheim T, Briddon PR
Publication type: Article
Publication status: Published
Journal: Journal of Physics Condensed Matter
ISSN (print): 0953-8984
ISSN (electronic): 1361-648X
Publisher: Institute of Physics Publishing Ltd.
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