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Lookup NU author(s): Professor Patrick Briddon
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An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90° partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.
Author(s): Ewels CP, Leoni S, Heggie MI, Jemmer P, Hernandez E, Jones R, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review Letters
ISSN (print): 0031-9007
ISSN (electronic): 1079-7114
Publisher: American Physical Society
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