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Characterisation of 4H-SiC Schottky diodes for IGBT applications

Lookup NU author(s): Dr Christopher Johnson, Dr Alton Horsfall, Dominique Morrison

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Abstract

Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. High current SiC devices are achieved by parallel connection of a large number of small elements. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparisons made with Si PiN diodes at currents of up to 20A and dc link voltages of up to 600V. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses and the levels of EMI generated by switching transitions.


Publication metadata

Author(s): Johnson CM, Rahimo M, Wright NG, Hinchley DA, Horsfall AB, Morrison DJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Industry Applications Conference 2000. Conference Record of the 2000 IEEE

Year of Conference: 2000

Pages: 2941-2947

ISSN: 0780364015

Publisher: Institution of Electronic and Electrical Engineers

URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=882584&tag=1


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