Browse by author
Lookup NU author(s): Dr Christopher Johnson, Dr Alton Horsfall, Dominique Morrison
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. High current SiC devices are achieved by parallel connection of a large number of small elements. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparisons made with Si PiN diodes at currents of up to 20A and dc link voltages of up to 600V. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses and the levels of EMI generated by switching transitions.
Author(s): Johnson CM, Rahimo M, Wright NG, Hinchley DA, Horsfall AB, Morrison DJ
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Industry Applications Conference 2000. Conference Record of the 2000 IEEE
Year of Conference: 2000
Pages: 2941-2947
ISSN: 0780364015
Publisher: Institution of Electronic and Electrical Engineers
URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=882584&tag=1
