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1.6 kV 4H-SiC Schottky diodes for IGBT applications

Lookup NU author(s): Dr Christopher Johnson, Dr Alton Horsfall, Dominique Morrison


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Si fast recovery diodes currently limit the performance of many IGBT powered systems. In this paper SiC Schottky diodes are proposed as an alternative technology. The static and dynamic performance of the SiC Schottky diodes is evaluated and comparison made with Si PiN diodes at currents of up to 20 A and dc link voltages of up to 400 V. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses and the levels of EMI generated by switching transitions.

Publication metadata

Author(s): Johnson CM, Rahimo M, Wright NG, Hinchley DA, Horsfall AB, Morrison DJ, Knights A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Eighth International Conference on Power Electronics and Variable Speed Drives, 2000

Year of Conference: 2000

Pages: 241-245

Publisher: Institution of Electronic and Electrical Engineers


DOI: 10.1049/cp:20000252

Notes: (IEE Conf. Publ. No. 475)

Library holdings: Search Newcastle University Library for this item

ISBN: 0852967292