Browse by author
Lookup NU author(s): Angharad Jones,
Dr Jon Goss,
Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri-and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.
Author(s): Jones R, Coomer BJ, Goss JP, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physica Status Solidi (B) Basic Research
Print publication date: 01/11/2000
ISSN (print): 0370-1972
ISSN (electronic): 1521-3951
Publisher: Wiley-Blackwell Publishing
Altmetrics provided by Altmetric