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Dislocations in hexagonal and cubic GaN

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The structure and electronic activity of several types of dislocations in both hexagonal and cubic GaN are calculated using first-principles methods. Most of the stoichiometric dislocations investigated in hexagonal GaN do not induce deep acceptor states and thus cannot be responsible for the yellow luminescence. However, it is shown that electrically active point defects, in particular gallium vacancies and oxygen-related defect complexes, can be trapped at the stress field of the dislocations and may be responsible for this luminescence. For cubic GaN, we find the ideal stoichiometric 60° dislocation to be electrically active and the glide set to be more stable than the shuffle. The dissociation of the latter is considered.

Publication metadata

Author(s): Blumenau AT, Elsner J, Jones R, Heggie MI, Oberg S, Frauenheim T, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2000

Volume: 12

Issue: 49

Pages: 10223-10233

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/12/49/322

DOI: 10.1088/0953-8984/12/49/322

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