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Infrared absorption experiments and ab initio computer simulations are used to study tin-carbon centers in silicon. Electron irradiation of C and Sn doped Si leads to prominent absorption lines at 873.5 and 1025 cm-1. These are assigned to a carbon interstitial trapped by a substitutional Sn atom. The calculated modes are in good agreement with those observed. The calculations also suggest that a close-by pair of substitutional C and Sn will be a stable but electrically inert defect. This defect may account for the experimentally observed drop in the concentration of the Cs-Ci defect after a room temperature annealing. Finally, we suggest Sn-C codoping of Si for manufacturing of radiation hard silicon.
Author(s): Briddon PR; Jones R; Lavrov EV; Fanciulli M; Kaukonen M
Publication type: Article
Publication status: Published
Journal: Physical Review B - Condensed Matter and Materials Physics
Pages: 125212 - 125212-5
ISSN (print): 0163-1829
ISSN (electronic): 1095-3795
Publisher: American Physical Society
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