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Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH*2 complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed. © 2001 Elsevier Science B.V. All rights reserved.
Author(s): Hourahine B, Jones R, Oberg S, Briddon PR, Markevich VP, Newman RC, Hermansson J, Kleverman M, Lindstrom JL, Murin LI, Fukata N, Suezawa M
Publication type: Article
Publication status: Published
Journal: Physica B: Condensed Matter
Year: 2001
Volume: 308-310
Pages: 197-201
ISSN (print): 0921-4526
ISSN (electronic): 1873-2135
Publisher: Elsevier B.V.
URL: http://dx.doi.org/10.1016/S0921-4526(01)00719-0
DOI: 10.1016/S0921-4526(01)00719-0
Notes: International Conference on Defects in Semiconductors
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