ePrints

Identification of the tetra-interstitial in silicon

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

First-principles computational methods are employed to investigate the structural, vibrational, optical and electronic properties of the self-interstitial aggregate, I4 in silicon. We find the defect to be electrically active and identify it with the B3 EPR centre. We also show that its properties are consistent with DLTS and optical spectra observed following implantation of silicon.

Publication metadata

Author(s): Briddon PR; Goss JP; Coomer BJ; Jones R; Oberg S

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2001

Volume: 13

Issue: 1

Pages: L1-L7

Print publication date: 08/01/2001

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/13/1/101

DOI: 10.1088/0953-8984/13/1/101

Altmetrics

Share