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Lookup NU author(s): Professor Jon Goss,
Professor Patrick Briddon
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First-principles computational methods are employed to investigate the structural, vibrational, optical and electronic properties of the self-interstitial aggregate, I4 in silicon. We find the defect to be electrically active and identify it with the B3 EPR centre. We also show that its properties are consistent with DLTS and optical spectra observed following implantation of silicon.
Author(s): Briddon PR; Goss JP; Coomer BJ; Jones R; Oberg S
Publication type: Article
Publication status: Published
Journal: Journal of Physics Condensed Matter
Print publication date: 08/01/2001
ISSN (print): 0953-8984
ISSN (electronic): 1361-648X
Publisher: Institute of Physics Publishing Ltd.
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