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Raman and finite-element analysis of a mechanically strained silicon microstructure

Lookup NU author(s): Emeritus Professor James Burdess, Dr Alun Harris, Dr John Hedley

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Abstract

Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mechanically stressed silicon microstructures. Data are presented as strain images with a spatial resolution of around 0.8 μm. A useful correlation is demonstrated between finite-element analysis calculations of volumetric strain and Raman shift. The results demonstrate that silicon beam structures incorporating a 90° bend will experience a non-uniform stress distribution along the bend radius for small radii of curvature.

Publication metadata

Author(s): Bowden M, Gardiner DJ, Wood D, Burdess J, Harris A, Hedley J

Publication type: Article

Publication status: Published

Journal: Journal of Micromechanics and Microengineering

Year: 2001

Volume: 11

Issue: 1

Pages: 7-12

ISSN (print): 0960-1317

ISSN (electronic): 1361-6439

Publisher: Institute of Physics Publishing Ltd

URL: http://dx.doi.org/10.1088/0960-1317/11/1/302

DOI: 10.1088/0960-1317/11/1/302

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