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Effect of interface localization on elastic scattering in AlSb/InAs superlattice infrared detectors

Lookup NU author(s): Dr Michael Shaw, Dr Matthew Kitchin, Professor Milan Jaros

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Abstract

We employ a microscopic model of AlSb/InAs superlattices to study their dynamical characteristics and the effect of interface bond type. The localization of valence band-edge states at InSb-like interfaces is observed, and we use the elastic scattering cross-section of substitutional defects to probe the superlattice bandstructures. The variation of the scattering properties provides an unambiguous signature of the localized interface states that exist in our model.


Publication metadata

Author(s): Shaw MJ; Jaros M; Kitchin MR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2001

Volume: 63

Issue: 15

Print publication date: 01/01/2001

ISSN (print): 0163-1829

ISSN (electronic): 0556-2805

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.63.155303

DOI: 10.1103/PhysRevB.63.155303


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