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Scattering from interface islands: Enhanced lifetimes through non-linear effect of cation defects

Lookup NU author(s): Dr Michael Shaw, Dr Elizabeth Corbin, Dr Matthew Kitchin, Professor Milan Jaros

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Abstract

We present quantitative calculations of scattering lifetimes associated with isovalent anion and cation defects in GaSb/InAs detector heterostructures, and identify the dependence upon the proximity of the defects to the heterointerfaces. The carrier lifetimes arising through scattering from interface islands of anion defects are shown to depend non-linearly upon the presence of additional cation defects. These weakly scattering cation defects are shown to control the larger scattering from the anion islands, enabling lifetimes to be enhanced by more than an order of magnitude through the inclusion of additional lattice imperfections. © 2001 Elsevier Science B.V. All rights reserved.

Publication metadata

Author(s): Corbin EA; Shaw MJ; Jaros M; Kitchin MR

Publication type: Article

Publication status: Published

Journal: Physica E: Low-Dimensional Systems and Nanostructures

Year: 2001

Volume: 11

Issue: 4

Pages: 368-376

ISSN (print): 1386-9477

ISSN (electronic): 1873-1759

Publisher: Elsevier B.V.

URL: http://dx.doi.org/10.1016/S1386-9477(01)00162-X

DOI: 10.1016/S1386-9477(01)00162-X

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