Browse by author
Lookup NU author(s): Dr Michael Shaw,
Dr Elizabeth Corbin,
Dr Matthew Kitchin,
Professor Milan Jaros
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
A series of GaInSb/InAs heterostructures for infra-red detector devices are studied using a strain-dependent empirical pseudopotential scheme. The effect of a number of structural design parameters upon key properties of the structures for detector applications is examined, through the calculation of dynamical characteristics in the presence of commonly occurring defects and through optical absorption spectra. Large changes in the scattering cross-sections of particular defects are related to variations in the superlattice layer widths, enabling the wave-function engineering of optimised detector structures with regard to lifetimes. © 2001 Elsevier Science Ltd.
Author(s): Corbin EA; Shaw MJ; Jaros M; Kitchin MR
Publication type: Article
Publication status: Published
Journal: Microelectronics Journal
ISSN (print): 0026-2692
Altmetrics provided by Altmetric