Toggle Main Menu Toggle Search

Open Access padlockePrints

Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon

Lookup NU author(s): Professor Patrick Briddon


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


We have observed the donor (Ec - 0.22 eV) and acceptor (Ec - 0.16 eV) levels related to hydrogen-carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen-carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen-carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results. © 2001 Elsevier Science B.V. All rights reserved.

Publication metadata

Author(s): Andersen O, Dobaczewski L, Peaker AR, Bonde Nielsen K, Hourahine B, Jones R, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 2001

Volume: 308-310

Pages: 139-142

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society


DOI: 10.1016/S0921-4526(01)00672-X

Notes: International Conference on Defects in Semiconductors


Altmetrics provided by Altmetric