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Lookup NU author(s): Dr Elizabeth Corbin, Dr Michael Shaw, Dr Matthew Kitchin, Professor Milan Jaros
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We present full-scale calculations of highly p-type doped SiGe heterojunction internal photoemission (HIP) detectors that operate in the mid-infrared (3- to 5-μm) range of wavelength. We explore the effects of including undoped spacer layers within the highly doped SiGe wells, for which a systematic body of experimental data is available to us, and which demonstrates a substantial reduction in the dark current produced by these devices. We model the doping explicitly by means of a screened Coulomb potential, leading to a full description of the resultant impurity band, and compare our calculated optical line shapes with recent state-of-the-art molecular-beam epitaxy experiments. The variation of the optical response with well width, germanium concentration, spacer width and position, and doping concentration are all considered. © 2001 Society of Photo-Optical Instrumentation Engineers.
Author(s): Corbin E; Shaw MJ; Jaros M; Kitchin MR; Konle J; Presting H
Publication type: Article
Publication status: Published
Journal: Optical Engineering
Year: 2001
Volume: 40
Issue: 12
Pages: 2753-2762
ISSN (print): 0091-3286
ISSN (electronic): 1560-2303
Publisher: SPIE: International Society for Optical Engineering
URL: http://dx.doi.org/10.1117/1.1416695
DOI: 10.1117/1.1416695
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