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Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications

Lookup NU author(s): Dr Elizabeth Corbin, Dr Michael Shaw, Dr Matthew Kitchin, Professor Milan Jaros


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We present full-scale calculations of highly p-type doped SiGe heterojunction internal photoemission (HIP) detectors that operate in the mid-infrared (3- to 5-μm) range of wavelength. We explore the effects of including undoped spacer layers within the highly doped SiGe wells, for which a systematic body of experimental data is available to us, and which demonstrates a substantial reduction in the dark current produced by these devices. We model the doping explicitly by means of a screened Coulomb potential, leading to a full description of the resultant impurity band, and compare our calculated optical line shapes with recent state-of-the-art molecular-beam epitaxy experiments. The variation of the optical response with well width, germanium concentration, spacer width and position, and doping concentration are all considered. © 2001 Society of Photo-Optical Instrumentation Engineers.

Publication metadata

Author(s): Corbin E; Shaw MJ; Jaros M; Kitchin MR; Konle J; Presting H

Publication type: Article

Publication status: Published

Journal: Optical Engineering

Year: 2001

Volume: 40

Issue: 12

Pages: 2753-2762

ISSN (print): 0091-3286

ISSN (electronic): 1560-2303

Publisher: SPIE: International Society for Optical Engineering


DOI: 10.1117/1.1416695


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