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Lookup NU author(s): Dr Len Pritchard, Dr Christopher Johnson, Professor Paul Acarnley, Dr Alton Horsfall
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This paper presents the results of an investigation into the structural and electrothermal properties of a group of commercial power MOSFET devices. Variations between devices of the same type designation were examined using electrothermal measurements, microscopic analysis and mathematical simulation techniques. Transient electrical measurements demonstrate significant differences in the semiconductor die temperature, supported by observed variations in structure and thermal modelling results.
Author(s): Acarnley PP; Pritchard LS; Horsfall AB; Johnson CM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Power Electronics, Machines and Drives
Year of Conference: 2002
Pages: 562-567
ISSN: 0537-9989
Publisher: IEEE
URL: http://dx.doi.org/10.1049/cp:20020178
DOI: 10.1049/cp:20020178
Library holdings: Search Newcastle University Library for this item
ISBN: 0852967470