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Planar interstitial aggregates in Si

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon

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Abstract

Self-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions and inhabiting either {111} or {113} crystallographic planes. These systems are known to be electrically and optically active. We present the results of first-principles calculations on the structure and energetics for candidate structures contained within the {113}, {111} and {001} planes and compare the results with experiment.

Publication metadata

Author(s): Briddon PR; Goss JP; Eberlein TAG; Jones R; Pinho N; Blumenau AT; Frauenheim T; Oberg S

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2002

Volume: 14

Issue: 48

Pages: 12843-12853

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/14/48/324

DOI: 10.1088/0953-8984/14/48/324

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