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Straight and kinked 90° partial dislocations in diamond and 3C-SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Density-functional based calculations are used to investigate low energy core structures of 90° partial dislocations in diamond and 3C-SiC. In both materials dislocation glide is analysed in terms of kink formation and migration and the fundamental steps to kink migration are investigated. We find the C terminated core structure in SiC to be more mobile than the Si core. However, the Si partial is electrically active and this opens the possibility of recombination-enhanced glide under ionizing conditions or an enhanced mobility in doped material.

Publication metadata

Author(s): Blumenau AT, Fall CJ, Jones R, Heggie MI, Briddon PR, Frauenheim T, Oberg S

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2002

Volume: 14

Issue: 48

Pages: 12741-12747

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/14/48/311

DOI: 10.1088/0953-8984/14/48/311

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