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Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

A ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC was presented. The electronic structures and the total energies of 6H-SiC single crystals that contain one, two, three and four stacking faults were studied. The possibility of local hexagonal to cubic polytypic transformations was discussed in light of the formation energy and quantum-well action.

Publication metadata

Author(s): Iwata HP, Lindefelt U, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2003

Volume: 94

Issue: 8

Pages: 4972-4979

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1610772

DOI: 10.1063/1.1610772

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