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Field enhanced diffusion of nitrogen and boron in 4H-silicon carbide

Lookup NU author(s): Dr Gordon Phelps, Dr Graeme Chester, Dr Christopher Johnson, Professor Nick Wright

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Abstract

A model for field enhanced diffusion (FED) for dopant within 4H-SiC was proposed. The samples received a combination of both boron and nitrogen implantation. Measured as-implanted dopant concentration profile data prior to high temperature annealing were utilized as input data for the proposed FED model.

Publication metadata

Author(s): Phelps GJ, Chester EG, Johnson CM, Wright NG

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2003

Volume: 94

Issue: 7

Pages: 4285-4290

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1604956

DOI: 10.1063/1.1604956

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