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Lookup NU author(s): Dr Gordon Phelps,
Dr Graeme Chester,
Dr Christopher Johnson,
Professor Nick Wright
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A model for field enhanced diffusion (FED) for dopant within 4H-SiC was proposed. The samples received a combination of both boron and nitrogen implantation. Measured as-implanted dopant concentration profile data prior to high temperature annealing were utilized as input data for the proposed FED model.
Author(s): Phelps GJ, Chester EG, Johnson CM, Wright NG
Publication type: Article
Publication status: Published
Journal: Journal of Applied Physics
ISSN (print): 0021-8979
ISSN (electronic): 1520-8850
Publisher: American Institute of Physics
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