ePrints

Energies and electronic properties of isolated and interacting twin boundaries in 3C-SiC, Si, and diamond

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

First-principles calculations of twin boundaries in 3 C-SiC, Si, and diamond are performed, based on the density-functional theory in the local density approximation. We have investigated the formation energies and electronic properties of isolated and interacting twin boundaries. It is found that in 3 C-SiC, interacting twin boundaries which are separated by more than two Si-C bilayers are actually energetically more favorable, implying a relatively frequent appearance of these defects. The effect of the spontaneous polarization associated with the hexagonal symmetry around twin boundaries is also studied, and we have observed that the wave functions belonging to the conduction- and valence-band edge states in 3 C-SiC tend to be localized almost exclusively on different sides of the faulted layers, while there is no such feature in Si or diamond.

Publication metadata

Author(s): Iwata HP, Lindefelt U, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2003

Volume: 68

Issue: 11

ISSN (print): 0163-1829

ISSN (electronic):

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.68.113202

DOI: 10.1103/PhysRevB.68.113202

Notes: Article no. 113202 4 pages

Altmetrics

Share