Toggle Main Menu Toggle Search

Open Access padlockePrints

Stable hydrogen pair trapped at carbon impurities in silicon

Lookup NU author(s): Professor Patrick Briddon


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Local mode spectroscopy and ab initio modeling are used to investigate two trigonal defects found in carbon rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab-initio modeling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si respectively. The two structures are nearly degenerate and possesess vibrational modes in good agreement with those observed experimentally. The defects are energetically favorable in comparison with separated Cs and H2 in Si and may represent aggregation sites for hydrogen.

Publication metadata

Author(s): Markevich VP, Hourahine B, Newman RC, Jones R, Kleverman M, Lindstrom JL, Murin LI, Suezawa M, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Diffusion and Defect Data. Pt A Defect and Diffusion Forum

Year: 2003

Volume: 221-223

Pages: 1-9

Print publication date: 01/01/2003

ISSN (print): 1012-0386

ISSN (electronic):

Publisher: Scitec Publications Ltd.


DOI: 10.4028/


Altmetrics provided by Altmetric