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Basal plane partial dislocations in silicon carbide

Lookup NU author(s): Professor Patrick Briddon


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Under operating conditions (forward bias) bipolar 4H- and 6H-SiC devices are known to degrade rapidly through stacking fault formation and expansion in the basal plane. It has been suggested that a recombination-enhanced dislocation glide (REDG) mechanism allows the bordering Shockley partial dislocations to overcome their barrier to glide motion and thus results in the observed stacking fault growth. In this work, we investigate the structure and properties of the participating Shockley partials by means of density functional-based atomistic calculations. Their glide motion is modelled in a process involving the formation and subsequent migration of kinks. This in combination with an analysis of the electronic structure of the partials allows an identification of those types which will be affected by the REDG mechanism. © 2003 Published by Elsevier B.V.

Publication metadata

Author(s): Blumenau AT, Jones R, Oberg S, Briddon PR, Frauenheim T

Editor(s): Bonde Nielsen K., Nylandsted Larsen A., Weyer G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22)

Year of Conference: 2003

Pages: 160-164

ISSN: 0921-4526

Publisher: Elsevier BV


DOI: 10.1016/j.physb.2003.09.046