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Lookup NU author(s): Professor Patrick Briddon
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The results of supercell calculations of the electronic structure of single and multiple stacking faults (SF) SiC polytypes 3C, 4H, 6H and 15R were reported. The number of bound states, their energies and wave function localizations were well described by a quantum well model. The electronic polarization of the host crystal gave rise to a clear displacement of the wave functions for the localized gap states.
Author(s): Lindefelt U, Iwata H, Oberg S, Briddon PR
Editor(s): Bergman, P., Janzen, E.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM)
Year of Conference: 2003
Publisher: Trans Tech Publications Ltd.
Series Title: Materials Science Forum