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Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The results of supercell calculations of the electronic structure of single and multiple stacking faults (SF) SiC polytypes 3C, 4H, 6H and 15R were reported. The number of bound states, their energies and wave function localizations were well described by a quantum well model. The electronic polarization of the host crystal gave rise to a clear displacement of the wave functions for the localized gap states.

Publication metadata

Author(s): Lindefelt U, Iwata H, Oberg S, Briddon PR

Editor(s): Bergman, P., Janzen, E.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM)

Year of Conference: 2003

Pages: 907-912

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.907

DOI: 10.4028/www.scientific.net/MSF.433-436.907

Series Title: Materials Science Forum

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