ePrints

Identification of boron clusters and boron-interstitial clusters in silicon

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

The identity of boron clusters and boron interstitial clusters in Si, produced by radiation or implantation, has been studied theoretically. Local vibration modes of the single-boron interstitial and the diboron split interstitial (B2I) and its metastable isomer as well as substitutional dimers are found to be in good agreement with observations. The modes of a diboron defect that has trapped three interstitials B2I3 are close to those observed for the boron-related I2 luminescent center. The annealing of these centers around 400 °C coincides with the main recovery of the electrical activity of boron, but the formation of defects which are metastable casts doubt on previous modeling strategies.

Publication metadata

Author(s): Adey J, Goss JP, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2003

Volume: 67

Issue: 24

ISSN (print): 0163-1829

ISSN (electronic):

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.67.245325

DOI: 10.1103/PhysRevB.67.245325

Notes: Article no. 245325 5 pages

Altmetrics

Share