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Interstitial boron defects in Si

Lookup NU author(s): Professor Jon Goss, Angharad Jones, Professor Patrick Briddon


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A theoretical investigation is made into the structure and properties of complexes formed between boron and other common impurities in Si, namely hydrogen, oxygen and carbon. Particular emphasis is placed on identifying the centres with those observed experimentally. It is shown that BiB s, an electrically inert defect that can be identified with the infrared absorption Q-centre, can readily bind a hydrogen atom. B iBsH may then be responsible for the Ev+0.51 eV acceptor level seen in irradiated Si that contains hydrogen. B iOi has a (0/+) level close to Ec-0.23 eV and may be detected after the loss of Bi. The anneal of B iOi can lead to the formation of BiC s which is stable to ∼400°C and has a level near E v+0.29eV. © 2003 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Adey J, Goss JP, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 2003

Volume: 340-342

Pages: 505-508

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier


DOI: 10.1016/j.physb.2003.09.147


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