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Lookup NU author(s): Professor Patrick Briddon
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The multiple stacking faults in 4H-SiC, leading to narrow 3C polytype inclusions along the hexagonal c direction, were discussed. The stacking fault energies for successive stacking faults were calculated. The analysis showed that the stacking fault energy for the two stacking faults in adjacent basal planes was reduced by approximately a factor of 4 relative to that of one isolated stacking fault.
Author(s): Iwata H, Lindefelt U, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: Journal of Applied Physics
ISSN (print): 0021-8979
ISSN (electronic): 1520-8850
Publisher: American Institute of Physics
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