ePrints

Z1/Z2 defects in 4H-SiC

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Z1/Z2 defects in 4H-SiC were investigated. First-principles calculations were performed. Results showed that there is an interstitial-nitrogen-interstitial-carbon defect which is exceptionally thermally stable, bistable and has negative-U character.

Publication metadata

Author(s): Eberlein TAG, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 2003

Volume: 90

Issue: 22

Pages: 2255021-2255024

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.90.225502

DOI: 10.1103/PhysRevLett.90.225502

Altmetrics

Share