Browse by author
Lookup NU author(s): Dr Len Pritchard, Professor Paul Acarnley, Dr Christopher Johnson
Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their overall thermal transfer performance. This paper presents analytical results of the effect of spherical and spheroidal void geometries on the thermal conductivity of bulk media. Analytical results are compared with axially symmetric and three-dimensional thermal simulations of single and multiple cavity defects in planar structures. The effective thermal conductivity of the die to case attachment solder layer of two commercial metal oxide semiconductor field effect transistor (MOSFET) devices is estimated using these results, with cavity dimensions and distributions obtained by electron microscopy. © 2004 IEEE.
Author(s): Pritchard LS, Acarnley PP, Johnson CM
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Components and Packaging Technologies
Year: 2004
Volume: 27
Issue: 2
Pages: 259-267
Print publication date: 01/06/2004
ISSN (print): 1521-3331
ISSN (electronic): 1557-9972
Publisher: IEEE
URL: http://dx.doi.org/10.1109/TCAPT.2004.828584
DOI: 10.1109/TCAPT.2004.828584
Altmetrics provided by Altmetric