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Structure and electrical activity of rare-earth dopants in GaN

Lookup NU author(s): Dr Michael Shaw, Professor Patrick Briddon

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Abstract

The Eu, Er and Tm rare earth (RE) impurities in GaN were investigated by using density functional theory. It was observed that RE-VN close pair were stable at temperatures greater than 1000°C for 1 at.% RE doping and possess shallow levels possibly exciting intra-f luminescence in the visible. It was shown that the RE-VGa and RE-interstitial defects possess deep levels which exclude them as sources for visible RE-related luminescence. It was found that the gallium vacancies were bound to the RE with energies 270, 90 and 100 meV for Eu, Er and Tm, respectively.

Publication metadata

Author(s): Filhol J-S, Jones R, Shaw MJ, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2004

Volume: 84

Issue: 15

Pages: 2841

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1710710

DOI: 10.1063/1.1710710

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